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| LL4148 Small Signal Diodes MiniMELF FEATURES Silicon Epitaxial Planar Diodes Fast switching diode in MiniMELF case especially suited for automatic insertion. .063 (1.6) .055 (1.4) Cathode Mark This diode is also available in other case styles .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) including: the DO-35 case with the type designation 1N4148, the SOD-123 case with the type designation 1N4148W, and the SOT-23 case with the type designation IMBD4148. Dimensions in inches and (millimeters) MECHANICAL DATA Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Reverse Voltage Peak Reverse Voltage Forward DC current at Tamb = 25 C Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 C and f 50 Hz Surge Forward Current at t < 1 s and Tj = 25 C Power Dissipation at Tamb = 25 C Junction Temperature Storage Temperature Range 1) Value 75 100 2001) 1501) Unit V V mA mA VR VRM IF I0 IFSM Ptot Tj TS 500 5001) 175 -65 to +175 mA mW C C Valid provided that electrodes are kept at ambient temperature. 4/98 LL4148 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 C Capacitance at VF = VR = 0 Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 kHz Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V 1) Min. - Typ. - Max. 1 Unit V VF IR IR IR Ctot Vfr - - - - - - - - - - 25 5 50 4 2.5 nA A A pF V trr RthJA v - - 0.45 - - - 4 0.351) - ns K/mW - Valid provided that electrodes are kept at ambient temperature. Rectification Efficiency Measurement Circuit RATINGS AND CHARACTERISTIC CURVES LL4148 RATINGS AND CHARACTERISTIC CURVES LL4148 |
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